The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

Graphene-based van der Waals (vdW) heterojunction plays an important role in next-generation optoelectronics, nanoelectronics, and spintronics devices. The tunability of the Schottky barrier height (SBH) is beneficial for improving device performance, especially for the contact resistance. Herein, w...

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Bibliographic Details
Main Authors: Xuefei Liu, Zhaocai Zhang, Bing Lv, Zhao Ding, Zijiang Luo
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Nanomaterials
Subjects:
graphene/AlN interface
vertical strain
Schottky barrier height
Online Access:https://www.mdpi.com/2079-4991/10/9/1794

Internet

https://www.mdpi.com/2079-4991/10/9/1794

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