Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>x</sub>Ga<sub>1-x</sub>N/Al<sub>0.75</sub>Ga<sub>0.25</sub>N/AlN/SiC Metal&#x2013;Oxide&#x2013;Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>x</sub>Ga<sub>1-x</sub>N/Al<sub>0.75</sub>Ga<sub>0.25</sub>N/AlN/SiC Metal&#x2013;Oxide&#x2013;Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

Novel Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>x</sub>Ga<sub>1-x</sub>N/Al<sub>0.75</sub>Ga<sub>0.25</sub>N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap A...

Full description

Bibliographic Details
Main Authors: Ching-Sung Lee, Yan-Ting Shen, Wei-Chou Hsu, Yi-Ping Huang, Cheng-Yang You
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlₓGa₁−ₓN
MOS-HFET
symmetrically-graded
widegap channel
Al₂O₃
non-vacuum ultrasonic spray pyrolysis deposition
Online Access:https://ieeexplore.ieee.org/document/8917644/

Internet

https://ieeexplore.ieee.org/document/8917644/

Similar Items