Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>x</sub>Ga<sub>1-x</sub>N/Al<sub>0.75</sub>Ga<sub>0.25</sub>N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>x</sub>Ga<sub>1-x</sub>N/Al<sub>0.75</sub>Ga<sub>0.25</sub>N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

Novel Al<sub>0.75</sub>Ga<sub>0.25</sub>N/Al<sub>x</sub>Ga<sub>1-x</sub>N/Al<sub>0.75</sub>Ga<sub>0.25</sub>N/AlN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with symmetrically-graded widegap A...

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Bibliographic Details
Main Authors:	Ching-Sung Lee, Yan-Ting Shen, Wei-Chou Hsu, Yi-Ping Huang, Cheng-Yang You
Format:	Article
Language:	English
Published:	IEEE 2020-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	AlₓGa₁−ₓN MOS-HFET symmetrically-graded widegap channel Al₂O₃ non-vacuum ultrasonic spray pyrolysis deposition
Online Access:	https://ieeexplore.ieee.org/document/8917644/

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