Photoelectric properties of Bi2Se3 films grown by thermal evaporation method
The Bi _2 Se _3 films were prepared by thermal evaporation on different substrates (FTO, ITO and Glass). The structure and morphology are characterized by XRD and SEM. The optical band gap ( E _g ) is 1.47 eV, 1.54 eV, and 1.59 eV, respectively. The I-V and C–V curves have been obtained by a photoel...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab692f |