Comparison of the parasitic impedances from the drain‐source path of power transistor packages at up to 2 GHz
Abstract In this article, we compare several concepts for gallium‐nitride (GaN) power high electron mobility transistor (HEMT) packages in terms of their drain‐to‐source parasitic inductance and resistance values. Unlike in previous studies, however, due to several fast transient use cases the inves...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-05-01
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| Series: | Engineering Reports |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/eng2.12489 |