Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology
Using two kinds of targets (gallium and silicon dioxide) and the rf magnetron sputtering deposited technique, GdO<sub>x</sub>:SiO<sub>2</sub> thin film RRAM devices were deposited on TiN/Si substrate to form a metal–insulator–metal (MIM) structure. In addition, different oxyg...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-01-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/2/156 |