Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology
Using two kinds of targets (gallium and silicon dioxide) and the rf magnetron sputtering deposited technique, GdO<sub>x</sub>:SiO<sub>2</sub> thin film RRAM devices were deposited on TiN/Si substrate to form a metal–insulator–metal (MIM) structure. In addition, different oxyg...
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MDPI AG
2023-01-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/2/156 |
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| author | Kai-Huang Chen Chien-Min Cheng Na-Fu Wang Jia-Cheng Zhou Mei-Li Chen |
| author_facet | Kai-Huang Chen Chien-Min Cheng Na-Fu Wang Jia-Cheng Zhou Mei-Li Chen |
| author_sort | Kai-Huang Chen |
| collection | DOAJ |
| description | Using two kinds of targets (gallium and silicon dioxide) and the rf magnetron sputtering deposited technique, GdO<sub>x</sub>:SiO<sub>2</sub> thin film RRAM devices were deposited on TiN/Si substrate to form a metal–insulator–metal (MIM) structure. In addition, different oxygen concentrations and rf sputtering power parameters were prepared for the GdO<sub>x</sub>:SiO<sub>2</sub> thin films. Decrease of the defects and oxygen vacancies of the GdO<sub>x</sub>:SiO<sub>2</sub> thin films were used and repaired by rapid thermal annealing technology. Indium tin oxide (ITO) as the top electrode on the GdO<sub>x</sub>:SiO<sub>2</sub> thin film was prepared by the physical vapor deposition (PVD) method, and ITO/GdO<sub>x</sub>:SiO<sub>2</sub>/TiN/Si structures of the GdO<sub>x</sub>:SiO<sub>2</sub> thin films’ RRAM devices were also made. In addition, the current–voltage curves and devices’ endurance properties were measured by an impedance analyzer. Finally, the crystalline style, the preferred phase, the grain size, and surface microstructure of the thin films were analyzed and observed from X-ray diffraction and field emission scanning electron microscope measurements. |
| first_indexed | 2024-03-11T08:59:03Z |
| format | Article |
| id | doaj.art-81596555d4a544afad0162af0850fe66 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T08:59:03Z |
| publishDate | 2023-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-81596555d4a544afad0162af0850fe662023-11-16T19:54:13ZengMDPI AGCrystals2073-43522023-01-0113215610.3390/cryst13020156Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering TechnologyKai-Huang Chen0Chien-Min Cheng1Na-Fu Wang2Jia-Cheng Zhou3Mei-Li Chen4Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, TaiwanDepartment of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung City 83347, TaiwanDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, TaiwanDepartment of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan 710301, TaiwanUsing two kinds of targets (gallium and silicon dioxide) and the rf magnetron sputtering deposited technique, GdO<sub>x</sub>:SiO<sub>2</sub> thin film RRAM devices were deposited on TiN/Si substrate to form a metal–insulator–metal (MIM) structure. In addition, different oxygen concentrations and rf sputtering power parameters were prepared for the GdO<sub>x</sub>:SiO<sub>2</sub> thin films. Decrease of the defects and oxygen vacancies of the GdO<sub>x</sub>:SiO<sub>2</sub> thin films were used and repaired by rapid thermal annealing technology. Indium tin oxide (ITO) as the top electrode on the GdO<sub>x</sub>:SiO<sub>2</sub> thin film was prepared by the physical vapor deposition (PVD) method, and ITO/GdO<sub>x</sub>:SiO<sub>2</sub>/TiN/Si structures of the GdO<sub>x</sub>:SiO<sub>2</sub> thin films’ RRAM devices were also made. In addition, the current–voltage curves and devices’ endurance properties were measured by an impedance analyzer. Finally, the crystalline style, the preferred phase, the grain size, and surface microstructure of the thin films were analyzed and observed from X-ray diffraction and field emission scanning electron microscope measurements.https://www.mdpi.com/2073-4352/13/2/156RRAMGdO<sub>x</sub>:SiO<sub>2</sub>bipolar resistive switchingphysical propertiesrf power |
| spellingShingle | Kai-Huang Chen Chien-Min Cheng Na-Fu Wang Jia-Cheng Zhou Mei-Li Chen Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology Crystals RRAM GdO<sub>x</sub>:SiO<sub>2</sub> bipolar resistive switching physical properties rf power |
| title | Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology |
| title_full | Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology |
| title_fullStr | Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology |
| title_full_unstemmed | Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology |
| title_short | Bipolar Switching Properties of GdO<sub>x</sub>:SiO<sub>2</sub> Thin Film Resistive Random Access Memory Using Co-Sputtering Technology |
| title_sort | bipolar switching properties of gdo sub x sub sio sub 2 sub thin film resistive random access memory using co sputtering technology |
| topic | RRAM GdO<sub>x</sub>:SiO<sub>2</sub> bipolar resistive switching physical properties rf power |
| url | https://www.mdpi.com/2073-4352/13/2/156 |
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