Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study

Abstract Metal contacts form one of the main limitations for the introduction of 2D materials in next-generation scaled devices. Through ab-initio simulation techniques, we shed light on the fundamental physics and screen several 2D and 3D top and side contact metals. Our findings highlight that a l...

Full description

Bibliographic Details
Main Authors: Rutger Duflou, Geoffrey Pourtois, Michel Houssa, Aryan Afzalian
Format: Article
Language:English
Published: Nature Portfolio 2023-05-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-023-00402-3