Different substrate structures affect the substitution efficiency of Al atoms in AlxGa1−xN epitaxial films
Through XRD analysis and xrayutilities fitting, this paper investigates the structural parameters of AlxGa1−xN(AlGaN) epitaxial layers grown on both free-standing GaN (FS-GaN) substrates and GaN templates (4.5 um GaN on Sapphire), including thickness and Al composition. These parameters determine th...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-06-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0206475 |