Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

Epitaxial Graphene and Graphene–Based Devices Studied by Electrical Scanning Probe Microscopy

We present local electrical characterization of epitaxial graphene grown on both Si- and C-faces of 4H-SiC using Electrostatic Force Microscopy and Kelvin Probe Force Microscopy in ambient conditions and at elevated temperatures. These techniques provide a straightforward identification of graphene...

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Bibliographic Details
Main Authors: Tim L. Burnett, Vishal Panchal, Olga Kazakova
Format: Article
Language:English
Published: MDPI AG 2013-03-01
Series:Crystals
Subjects:
epitaxial graphene
SiC
adsorbates
Kelvin Probe Force Microscopy (KPFM)
Electrostatic Force Microscopy (EFM)
surface potential
work function
wettability
Online Access:http://www.mdpi.com/2073-4352/3/1/191

Internet

http://www.mdpi.com/2073-4352/3/1/191

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