Thermal Decomposition of Hafnium Ethoxide-Mollecular Precursor for Hafnia Dielectric Thin Films
The HfO2 thin-film is a very promising gate dielectric material for last generation transistors. The paper presents the thermal decomposition of hafnium ethoxide used as molecular precursor for obtaining hafnia thin films. The investigated molecular precursor is a mixture of Hf3O(OC2H5)10 and Hf4O(O...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Galati University Press
2012-09-01
|
| Series: | The Annals of “Dunarea de Jos” University of Galati. Fascicle IX, Metallurgy and Materials Science |
| Subjects: | |
| Online Access: | https://www.gup.ugal.ro/ugaljournals/index.php/mms/article/view/2885 |