Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
In this paper, novel Si/SiGe fin on insulator (FOI) structure fabrication on bulk-Si substrate is systematically explored. A notched Si/SiGe fin etching is first achieved by using a novel three-step etching after a high-quality of SiGe layer epitaxially grown is realized on a Si substrate by optimiz...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2021-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac16f0 |