Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications

In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of <inline-formula> <tex-math notation="LaTeX">$6.0 ~\mu...

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Bibliographic Details
Main Authors: Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN/GaN HEMTs on SiC
Cu metallization
minimum noise figure
Online Access:https://ieeexplore.ieee.org/document/10478115/

Internet

https://ieeexplore.ieee.org/document/10478115/

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