Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of <inline-formula> <tex-math notation="LaTeX">$6.0 ~\mu...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10478115/ |
| _version_ | 1797220677720211456 |
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| author | Howie Tseng Yueh-Chin Lin Chieh Cheng Po-Wei Chen Heng-Tung Hsu Yi-Fan Tsao Edward Yi Chang |
| author_facet | Howie Tseng Yueh-Chin Lin Chieh Cheng Po-Wei Chen Heng-Tung Hsu Yi-Fan Tsao Edward Yi Chang |
| author_sort | Howie Tseng |
| collection | DOAJ |
| description | In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of <inline-formula> <tex-math notation="LaTeX">$6.0 ~\mu \text{m}$ </tex-math></inline-formula> as interconnect, the cut-off frequency (fT), the maximum oscillation frequency (fmax), and the power performance can be improved. Besides, the thick-Cu-metallized device exhibits reduced minimum noise figure (NFmin) of 0.7, 1.0, 2.2 and 2.8 dB at 12, 14, 28 and 38 GHz, respectively, which can be attributed to the reduction of the source and drain resistance caused by thick Cu metallization. Furthermore, for stress test under high drain-to-source voltage (VDS) and high temperature, the proposed device exhibits good stability. The results show that the thick Cu metallization technology has great potential to be applied in satellite communication system. |
| first_indexed | 2024-04-24T12:53:21Z |
| format | Article |
| id | doaj.art-82a72b4f519240c1b0f2654aa4860ff0 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-24T12:53:21Z |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-82a72b4f519240c1b0f2654aa4860ff02024-04-05T23:00:13ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011226827410.1109/JEDS.2024.338103010478115Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication ApplicationsHowie Tseng0https://orcid.org/0009-0007-4177-8192Yueh-Chin Lin1Chieh Cheng2https://orcid.org/0009-0002-5608-7400Po-Wei Chen3https://orcid.org/0009-0006-0473-664XHeng-Tung Hsu4https://orcid.org/0000-0002-7753-5690Yi-Fan Tsao5https://orcid.org/0000-0001-6601-8308Edward Yi Chang6https://orcid.org/0000-0003-1616-5240International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, TaiwanDepartment of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, TaiwanDepartment of Electronic Engineering, National Yang Ming Chiao Tung University, Hsinchu, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, TaiwanInternational College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, TaiwanDepartment of Electronic Engineering, National Yang Ming Chiao Tung University, Hsinchu, TaiwanIn this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of <inline-formula> <tex-math notation="LaTeX">$6.0 ~\mu \text{m}$ </tex-math></inline-formula> as interconnect, the cut-off frequency (fT), the maximum oscillation frequency (fmax), and the power performance can be improved. Besides, the thick-Cu-metallized device exhibits reduced minimum noise figure (NFmin) of 0.7, 1.0, 2.2 and 2.8 dB at 12, 14, 28 and 38 GHz, respectively, which can be attributed to the reduction of the source and drain resistance caused by thick Cu metallization. Furthermore, for stress test under high drain-to-source voltage (VDS) and high temperature, the proposed device exhibits good stability. The results show that the thick Cu metallization technology has great potential to be applied in satellite communication system.https://ieeexplore.ieee.org/document/10478115/AlGaN/GaN HEMTs on SiCCu metallizationminimum noise figure |
| spellingShingle | Howie Tseng Yueh-Chin Lin Chieh Cheng Po-Wei Chen Heng-Tung Hsu Yi-Fan Tsao Edward Yi Chang Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications IEEE Journal of the Electron Devices Society AlGaN/GaN HEMTs on SiC Cu metallization minimum noise figure |
| title | Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications |
| title_full | Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications |
| title_fullStr | Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications |
| title_full_unstemmed | Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications |
| title_short | Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications |
| title_sort | improvement of algan gan hemt noise figure using thick cu metallization for satellite communication applications |
| topic | AlGaN/GaN HEMTs on SiC Cu metallization minimum noise figure |
| url | https://ieeexplore.ieee.org/document/10478115/ |
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