Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Abstract HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vaca...

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Bibliographic Details
Main Authors: Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park
Format: Article
Language:English
Published: SpringerOpen 2023-12-01
Series:Nano Convergence
Subjects:
HfO2
Ferroelectricity
Resistive switching
Semiconductor
Memory device
Online Access:https://doi.org/10.1186/s40580-023-00403-4

Internet

https://doi.org/10.1186/s40580-023-00403-4

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