Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

In this work, we present the development of an atomic layer deposition (ALD) process for metallic cobalt. The process operates at low temperatures using dicobalt hexacarbonyl-1-heptyne [Co2(CO)6HC≡CC5H11] and hydrogen plasma. For this precursor an ALD window in the temperature range between 50 and 1...

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Bibliographic Details
Main Authors: Mathias Franz, Mahnaz Safian Jouzdani, Lysann Kaßner, Marcus Daniel, Frank Stahr, Stefan E. Schulz
Format: Article
Language:English
Published: Beilstein-Institut 2023-09-01
Series:Beilstein Journal of Nanotechnology
Subjects:
atomic layer deposition (ald)
cobalt
low-temperature ald
peald
plasma-enhanced ald
xps
Online Access:https://doi.org/10.3762/bjnano.14.78

Internet

https://doi.org/10.3762/bjnano.14.78

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