Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process

Nitrogen incorporation changes the lattice spacing of SiC and can therefore lead to stress during physical vapor transport (PVT). The impact of the nitrogen-doping concentration during the initial phase of PVT growth of 4H-SiC was investigated using molten potassium hydroxide (KOH) etching, and the...

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Bibliographic Details
Main Authors: Johannes Steiner, Peter J. Wellmann
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
silicon carbide
dislocation networks
numerical simulation
doping
crystal growth
PVT
Online Access:https://www.mdpi.com/1996-1944/15/5/1897

Internet

https://www.mdpi.com/1996-1944/15/5/1897

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