Investigation of SiC and C Nanostructures Obtained by MWCVD
The results of experiments on the synthesis of SiC and C nanostructures by chemical vapor deposition in microwave plasma are presented in this article. The single crystal silicon plates with orientations [100] and [111] which previously passed chemical purification were used as substrates. Also, the...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
al-Farabi Kazakh National University
2017-06-01
|
| Series: | Eurasian Chemico-Technological Journal |
| Subjects: | |
| Online Access: | http://ect-journal.kz/index.php/ectj/article/view/105 |
| _version_ | 1811299154226315264 |
|---|---|
| author | B. Z. Mansurov A. K. Kenzhegulov B. S. Medyanova G. Partizan G. S. Suyundykova B. Zhumadilov M.E. Mansurova U. P. Koztayeva B. A. Aliyev |
| author_facet | B. Z. Mansurov A. K. Kenzhegulov B. S. Medyanova G. Partizan G. S. Suyundykova B. Zhumadilov M.E. Mansurova U. P. Koztayeva B. A. Aliyev |
| author_sort | B. Z. Mansurov |
| collection | DOAJ |
| description | The results of experiments on the synthesis of SiC and C nanostructures by chemical vapor deposition in microwave plasma are presented in this article. The single crystal silicon plates with orientations [100] and [111] which previously passed chemical purification were used as substrates. Also, the substrates of porous silicon were prepared in order to activate the surface during the synthesis. The synthesis temperature ranged from 700 to 900 °C in steps of 100 °C. The pressure in the chamber was changed depending on the power of the plasma. Studies by scanning electron microscopy (SEM) showed that formed nanostructures have a diameter of 200‒350 nm and a rough surface. The formation of nanostructures on the polished Si occurs on the SiC buffer layer. Analysis of SEM images of the samples shows that growth of NS on the surface of porous silicon is more widespread in contrast to the polished Si. The results of X-Ray spectral microanalysis showed that the carbon content in samples of nanostructures on polished Si varies from 10 to 20% and remains constant on porous silicon ~ 25%. The results of studies by Raman scattering confirmed that SiC film with structure of 3C-SiC is formed on the polished Si. Besides, the presence of main carbon peaks on both types of substrates in the range of 1338.2 and 1583 cm‒1 should be noted, which correspond to the carbon nanostructures. |
| first_indexed | 2024-04-13T06:32:01Z |
| format | Article |
| id | doaj.art-82fb50b101214875917d50d83a72a9d8 |
| institution | Directory Open Access Journal |
| issn | 1562-3920 2522-4867 |
| language | English |
| last_indexed | 2024-04-13T06:32:01Z |
| publishDate | 2017-06-01 |
| publisher | al-Farabi Kazakh National University |
| record_format | Article |
| series | Eurasian Chemico-Technological Journal |
| spelling | doaj.art-82fb50b101214875917d50d83a72a9d82022-12-22T02:58:07Zengal-Farabi Kazakh National UniversityEurasian Chemico-Technological Journal1562-39202522-48672017-06-0119216517510.18321/ectj648105Investigation of SiC and C Nanostructures Obtained by MWCVDB. Z. Mansurov0A. K. Kenzhegulov1B. S. Medyanova2G. Partizan3G. S. Suyundykova4B. Zhumadilov5M.E. Mansurova6U. P. Koztayeva7B. A. Aliyev8Center of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, KazakhstanCenter of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, KazakhstanCenter of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, Kazakhstan; al-Farabi Kazakh National University, 050040, al-Farabi ave., 71, Аlmaty, KazakhstanCenter of Innovative Technologies at the Institute of Combustion Problems, 050050, Polezhaeva st., 20, Almaty, Kazakhstan; al-Farabi Kazakh National University, 050040, al-Farabi ave., 71, Аlmaty, KazakhstanCenter of Innovative Technologies at the Institute of Combustion Problems, Polezhaeva st., 20, Almaty, Kazakhstan; Al-Farabi Kazakh National University, al-Farabi ave., 71, Аlmaty, KazakhstanCenter of Innovative Technologies at the Institute of Combustion Problems, Polezhaeva st., 20, Almaty, Kazakhstan; Al-Farabi Kazakh National University, al-Farabi ave., 71, Аlmaty, KazakhstanAl-Farabi Kazakh National University, al-Farabi ave., 71, Аlmaty, KazakhstanInstitute of Nuclear Physics, Ibragimova st., 1, Almaty, Kazakhstanal-Farabi Kazakh National University, 71 al-Farabi ave., Almaty, KazakhstanThe results of experiments on the synthesis of SiC and C nanostructures by chemical vapor deposition in microwave plasma are presented in this article. The single crystal silicon plates with orientations [100] and [111] which previously passed chemical purification were used as substrates. Also, the substrates of porous silicon were prepared in order to activate the surface during the synthesis. The synthesis temperature ranged from 700 to 900 °C in steps of 100 °C. The pressure in the chamber was changed depending on the power of the plasma. Studies by scanning electron microscopy (SEM) showed that formed nanostructures have a diameter of 200‒350 nm and a rough surface. The formation of nanostructures on the polished Si occurs on the SiC buffer layer. Analysis of SEM images of the samples shows that growth of NS on the surface of porous silicon is more widespread in contrast to the polished Si. The results of X-Ray spectral microanalysis showed that the carbon content in samples of nanostructures on polished Si varies from 10 to 20% and remains constant on porous silicon ~ 25%. The results of studies by Raman scattering confirmed that SiC film with structure of 3C-SiC is formed on the polished Si. Besides, the presence of main carbon peaks on both types of substrates in the range of 1338.2 and 1583 cm‒1 should be noted, which correspond to the carbon nanostructures.http://ect-journal.kz/index.php/ectj/article/view/105silicon carbide and carbonnanostructureschemical deposition from the gas phasemicrowave plasmaporous siliconmethod of scanning electron microscopyRaman scattering |
| spellingShingle | B. Z. Mansurov A. K. Kenzhegulov B. S. Medyanova G. Partizan G. S. Suyundykova B. Zhumadilov M.E. Mansurova U. P. Koztayeva B. A. Aliyev Investigation of SiC and C Nanostructures Obtained by MWCVD Eurasian Chemico-Technological Journal silicon carbide and carbon nanostructures chemical deposition from the gas phase microwave plasma porous silicon method of scanning electron microscopy Raman scattering |
| title | Investigation of SiC and C Nanostructures Obtained by MWCVD |
| title_full | Investigation of SiC and C Nanostructures Obtained by MWCVD |
| title_fullStr | Investigation of SiC and C Nanostructures Obtained by MWCVD |
| title_full_unstemmed | Investigation of SiC and C Nanostructures Obtained by MWCVD |
| title_short | Investigation of SiC and C Nanostructures Obtained by MWCVD |
| title_sort | investigation of sic and c nanostructures obtained by mwcvd |
| topic | silicon carbide and carbon nanostructures chemical deposition from the gas phase microwave plasma porous silicon method of scanning electron microscopy Raman scattering |
| url | http://ect-journal.kz/index.php/ectj/article/view/105 |
| work_keys_str_mv | AT bzmansurov investigationofsicandcnanostructuresobtainedbymwcvd AT akkenzhegulov investigationofsicandcnanostructuresobtainedbymwcvd AT bsmedyanova investigationofsicandcnanostructuresobtainedbymwcvd AT gpartizan investigationofsicandcnanostructuresobtainedbymwcvd AT gssuyundykova investigationofsicandcnanostructuresobtainedbymwcvd AT bzhumadilov investigationofsicandcnanostructuresobtainedbymwcvd AT memansurova investigationofsicandcnanostructuresobtainedbymwcvd AT upkoztayeva investigationofsicandcnanostructuresobtainedbymwcvd AT baaliyev investigationofsicandcnanostructuresobtainedbymwcvd |