The Method of Low-Temperature ICP Etching of InP/InGaAsP Heterostructures in Cl<sub>2</sub>-Based Plasma for Integrated Optics Applications
Chlorine processes are widely used for the formation of waveguide structures in InP-based optoelectronics. Traditionally, ICP etching of InP in a Cl<sub>2</sub>-based plasma requires substrate temperatures in the range of 150–200 °C. This condition is mandatory, since during the etching...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/12/1535 |