InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The...

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Bibliographic Details
Main Authors: Alexey E. Zhukov, Natalia V. Kryzhanovskaya, Eduard I. Moiseev, Anna S. Dragunova, Mingchu Tang, Siming Chen, Huiyun Liu, Marina M. Kulagina, Svetlana A. Kadinskaya, Fedor I. Zubov, Alexey M. Mozharov, Mikhail V. Maximov
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Materials
Subjects:
semiconductor laser
microdisk laser
quantum dots
III–V on Si
Online Access:https://www.mdpi.com/1996-1944/13/10/2315

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https://www.mdpi.com/1996-1944/13/10/2315

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