Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device
TiN/AlO<sub>x</sub>:Ti/TaO<sub>x</sub>/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optim...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-03-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/15/7/2402 |