Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device
TiN/AlO<sub>x</sub>:Ti/TaO<sub>x</sub>/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optim...
Main Authors: | Hee Ju Shin, Hyun Kyu Seo, Su Yeon Lee, Minsoo Park, Seong-Geon Park, Min Kyu Yang |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-03-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/15/7/2402 |
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