The interfacial features in photoluminescence of In0.52Al0.48As/InP distinguished with selective excitation
The photoluminescence experiment was performed at 77 K on two types of heterostructures of In0.52Al0.48As/InP grown by molecular beam epitaxy. One type has the so-called direct interface formed with In0.52Al0.48As grown on the InP (100) substrate, and another is a double heterostructure type, i.e.,...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0177708 |