Comprehensive Study and Optimization of Implementing p-NiO in β-Ga<sub>2</sub>O<sub>3</sub> Based Diodes via TCAD Simulation

Comprehensive Study and Optimization of Implementing p-NiO in β-Ga<sub>2</sub>O<sub>3</sub> Based Diodes via TCAD Simulation

In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga<sub>2</sub>O<sub>3</sub> based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga<sub>2</sub>O<sub>3</sub> heteroj...

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Bibliographic Details
Main Authors: Hong Zhou, Shifan Zeng, Jincheng Zhang, Zhihong Liu, Qian Feng, Shengrui Xu, Jinfeng Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Crystals
Subjects:
Ga<sub>2</sub>O<sub>3</sub>
NiO
diode
simulation
Schottky diodes
JBS
Online Access:https://www.mdpi.com/2073-4352/11/10/1186

Internet

https://www.mdpi.com/2073-4352/11/10/1186

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