High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, p...

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Bibliographic Details
Main Authors: Yang Wang, Gaoqiang Deng, Jie Ji, Haotian Ma, Shixu Yang, Jiaqi Yu, Yunfei Niu, Yusen Wang, Chao Lu, Yang Liu, Ke Tang, Wei Guo, Baolin Zhang, Yuantao Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2021-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0063784

Internet

http://dx.doi.org/10.1063/5.0063784

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