High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition
Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, p...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2021-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0063784 |
| _version_ | 1818420942004551680 |
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| author | Yang Wang Gaoqiang Deng Jie Ji Haotian Ma Shixu Yang Jiaqi Yu Yunfei Niu Yusen Wang Chao Lu Yang Liu Ke Tang Wei Guo Baolin Zhang Yuantao Zhang |
| author_facet | Yang Wang Gaoqiang Deng Jie Ji Haotian Ma Shixu Yang Jiaqi Yu Yunfei Niu Yusen Wang Chao Lu Yang Liu Ke Tang Wei Guo Baolin Zhang Yuantao Zhang |
| author_sort | Yang Wang |
| collection | DOAJ |
| description | Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, pressure, and V/III ratio, N-polar GaN with a relatively high sheet resistivity of 3.6 × 105 Ω/sq was achieved. The secondary ion mass spectroscopy and x-ray diffraction measurement results demonstrate that the increased carbon impurity concentration is primarily responsible for the high resistivity. Moreover, N-polar GaN/Al0.25Ga0.75N heterojunctions were deposited on the high-resistivity N-polar GaN template. An extremely high-density two-dimensional electron gas of up to 1.12 × 1013 cm−2 was realized at the interface between the Al0.25Ga0.75N and the GaN. It is reasonably believed that the experimental results obtained here are beneficial for the development of high-performance N-polar GaN-based electronic devices. |
| first_indexed | 2024-12-14T13:02:28Z |
| format | Article |
| id | doaj.art-83af3b2d8a5f49d997ebbb863961d0df |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-14T13:02:28Z |
| publishDate | 2021-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
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| spelling | doaj.art-83af3b2d8a5f49d997ebbb863961d0df2022-12-21T23:00:25ZengAIP Publishing LLCAIP Advances2158-32262021-11-011111115301115301-610.1063/5.0063784High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor depositionYang Wang0Gaoqiang Deng1Jie Ji2Haotian Ma3Shixu Yang4Jiaqi Yu5Yunfei Niu6Yusen Wang7Chao Lu8Yang Liu9Ke Tang10Wei Guo11Baolin Zhang12Yuantao Zhang13State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaSchool of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, ChinaNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, ChinaNitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, pressure, and V/III ratio, N-polar GaN with a relatively high sheet resistivity of 3.6 × 105 Ω/sq was achieved. The secondary ion mass spectroscopy and x-ray diffraction measurement results demonstrate that the increased carbon impurity concentration is primarily responsible for the high resistivity. Moreover, N-polar GaN/Al0.25Ga0.75N heterojunctions were deposited on the high-resistivity N-polar GaN template. An extremely high-density two-dimensional electron gas of up to 1.12 × 1013 cm−2 was realized at the interface between the Al0.25Ga0.75N and the GaN. It is reasonably believed that the experimental results obtained here are beneficial for the development of high-performance N-polar GaN-based electronic devices.http://dx.doi.org/10.1063/5.0063784 |
| spellingShingle | Yang Wang Gaoqiang Deng Jie Ji Haotian Ma Shixu Yang Jiaqi Yu Yunfei Niu Yusen Wang Chao Lu Yang Liu Ke Tang Wei Guo Baolin Zhang Yuantao Zhang High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition AIP Advances |
| title | High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition |
| title_full | High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition |
| title_fullStr | High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition |
| title_full_unstemmed | High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition |
| title_short | High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition |
| title_sort | high resistivity nitrogen polar gan for gan algan high electron mobility transistors by metalorganic chemical vapor deposition |
| url | http://dx.doi.org/10.1063/5.0063784 |
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