High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

High-resistivity nitrogen-polar GaN for GaN/AlGaN high electron mobility transistors by metalorganic chemical vapor deposition

Nitrogen-polar (N-polar) III-nitride has natural advantages in the fabrication of electronic devices. In this work, unintentionally doped N-polar GaN films were grown on sapphire substrates by metalorganic chemical vapor deposition. By optimizing the growth parameters including growth temperature, p...

Full description

Bibliographic Details
Main Authors:	Yang Wang, Gaoqiang Deng, Jie Ji, Haotian Ma, Shixu Yang, Jiaqi Yu, Yunfei Niu, Yusen Wang, Chao Lu, Yang Liu, Ke Tang, Wei Guo, Baolin Zhang, Yuantao Zhang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2021-11-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0063784

Similar Items

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
by: Wojciech Wojtasiak, et al.
Published: (2018-10-01)

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
by: Marino, Fabio Alessio, et al.
Published: (2011)

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors
by: Lu, Bin, et al.
Published: (2012)

Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
by: Xinke Liu, et al.
Published: (2017-09-01)

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
by: Yusnizam Yusuf, et al.
Published: (2023-01-01)

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN
by: Gwen Rolland, et al.
Published: (2021-09-01)

Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs
by: Guangnan Zhou, et al.
Published: (2021-04-01)

Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
by: Hideyuki Itakura, et al.
Published: (2020-02-01)

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
by: Paula Palacios, et al.
Published: (2021-02-01)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
by: Tzu-Hsuan Chang, et al.
Published: (2017-07-01)

Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
by: Ki-Sik Im, et al.
Published: (2020-09-01)

Comparison of Different Cooling Schemes for AlGaN/GaN High-Electron Mobility Transistors
by: Yunqian Song, et al.
Published: (2023-12-01)

Surface and mechanical stress effects in AlGaN/GaN high electron mobility transistors
by: Jayanta Joglekar, Sameer
Published: (2017)

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
by: Lu, Bin, et al.
Published: (2012)

On-state reliability study of AlGaN/GaN high electron mobility transistor on silicon
by: Syaranamual, Govindo Joannesha
Published: (2018)

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor
by: Volkan Esendag, et al.
Published: (2022-09-01)

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal
by: Chia-Hao Liu, et al.
Published: (2020-01-01)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
by: You-Chen Weng, et al.
Published: (2023-04-01)

High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology
by: Yuan, Mengyang, et al.
Published: (2023)

Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor
by: Siva Pratap Reddy Mallem, et al.
Published: (2023-12-01)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
by: Atsushi Tanaka, et al.
Published: (2022-05-01)

Graphene/AlGaN/GaN RF Switch
by: Yevhen Yashchyshyn, et al.
Published: (2021-10-01)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
by: Haiping Wang, et al.
Published: (2022-12-01)

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
by: Anthonin Delphan, et al.
Published: (2023-02-01)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
by: Hanghang Lv, et al.
Published: (2023-07-01)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
by: Dmitri S. Arteev, et al.
Published: (2022-12-01)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
by: Honghui Liu, et al.
Published: (2022-11-01)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)

Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure
by: Bhishma Pandit, et al.
Published: (2023-04-01)

Self-aligned AlGaN/GaN transistors for sub-mm wave applications
by: Saadat, Omair I
Published: (2010)

Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics
by: Peter Kordos, et al.
Published: (2005-01-01)

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors
by: Chung, Jinwook W. (Jinwook Will)
Published: (2009)

Thermal Field Analysis for New AlGaN/GaN HEMT With Partial Etched AlGaN Layer
by: Baoxing Duan, et al.
Published: (2020-01-01)

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
by: Hanyuan Zhang, et al.
Published: (2020-04-01)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

Photoluminescence properties of a single GaN nanorod with GaN/AlGaN multilayer quantum disks
by: Yi, SN, et al.
Published: (2007)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
by: Maodan Ma, et al.
Published: (2022-12-01)

Processing technology for high quality AlGaN/GaN MOSHEMT interfaces
by: Saadat, Omair I
Published: (2015)