Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film
To extract comprehensive and accurate interface state density ( D _it ) distribution for a low-temperature polysilicon (LTPS) thin film, three well-established methods based on capacitance–voltage ( C – V ) measurements were compared: high–low frequency capacitance, conductance, and quasi-static (QS...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2021-01-01
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Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/ac1aa6 |