Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film
To extract comprehensive and accurate interface state density ( D _it ) distribution for a low-temperature polysilicon (LTPS) thin film, three well-established methods based on capacitance–voltage ( C – V ) measurements were compared: high–low frequency capacitance, conductance, and quasi-static (QS...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ac1aa6 |
| _version_ | 1797746887606927360 |
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| author | Woohui Lee Joohee Oh Jae Hwan Chu Sanggun Choi Taewook Kang Hyeyong Chu Hyoungsub Kim |
| author_facet | Woohui Lee Joohee Oh Jae Hwan Chu Sanggun Choi Taewook Kang Hyeyong Chu Hyoungsub Kim |
| author_sort | Woohui Lee |
| collection | DOAJ |
| description | To extract comprehensive and accurate interface state density ( D _it ) distribution for a low-temperature polysilicon (LTPS) thin film, three well-established methods based on capacitance–voltage ( C – V ) measurements were compared: high–low frequency capacitance, conductance, and quasi-static (QS) capacitance methods. Because of the strong frequency-dependent response of grain boundary traps within the LTPS, C – V measurements are necessary on p- as well as n-type LTPS films, as they provide D _it distribution across the entire LTPS band gap. The QS capacitance method, which uses an optimal high-frequency C – V curve with a minimal grain boundary trap response, provided the best and most comprehensive estimate of D _it distribution across the LTPS band gap, even at room temperature (25 °C). Although the narrow extraction ranges of D _it were extended toward the mid-gap region by increasing the measurement temperature in both high–low frequency capacitance and conductance methods, the responses of the grain boundary traps still overestimated the D _it values near the band edges. |
| first_indexed | 2024-03-12T15:43:13Z |
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| id | doaj.art-83bd104425d441d8b0dac09399d86108 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:43:13Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
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| series | Materials Research Express |
| spelling | doaj.art-83bd104425d441d8b0dac09399d861082023-08-09T15:51:48ZengIOP PublishingMaterials Research Express2053-15912021-01-018808590210.1088/2053-1591/ac1aa6Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin filmWoohui Lee0Joohee Oh1Jae Hwan Chu2Sanggun Choi3Taewook Kang4Hyeyong Chu5Hyoungsub Kim6https://orcid.org/0000-0003-3549-4250School of Advanced Materials Science & Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaSchool of Advanced Materials Science & Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaDisplay Research Center, Samsung Display Co., Ltd, Yongin-si 17113, Republic of KoreaDisplay Research Center, Samsung Display Co., Ltd, Yongin-si 17113, Republic of KoreaDisplay Research Center, Samsung Display Co., Ltd, Yongin-si 17113, Republic of KoreaDisplay Research Center, Samsung Display Co., Ltd, Yongin-si 17113, Republic of KoreaSchool of Advanced Materials Science & Engineering, Sungkyunkwan University , Suwon 16419, Republic of KoreaTo extract comprehensive and accurate interface state density ( D _it ) distribution for a low-temperature polysilicon (LTPS) thin film, three well-established methods based on capacitance–voltage ( C – V ) measurements were compared: high–low frequency capacitance, conductance, and quasi-static (QS) capacitance methods. Because of the strong frequency-dependent response of grain boundary traps within the LTPS, C – V measurements are necessary on p- as well as n-type LTPS films, as they provide D _it distribution across the entire LTPS band gap. The QS capacitance method, which uses an optimal high-frequency C – V curve with a minimal grain boundary trap response, provided the best and most comprehensive estimate of D _it distribution across the LTPS band gap, even at room temperature (25 °C). Although the narrow extraction ranges of D _it were extended toward the mid-gap region by increasing the measurement temperature in both high–low frequency capacitance and conductance methods, the responses of the grain boundary traps still overestimated the D _it values near the band edges.https://doi.org/10.1088/2053-1591/ac1aa6low-temperature polysiliconinterface state densitycapacitance-voltage |
| spellingShingle | Woohui Lee Joohee Oh Jae Hwan Chu Sanggun Choi Taewook Kang Hyeyong Chu Hyoungsub Kim Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film Materials Research Express low-temperature polysilicon interface state density capacitance-voltage |
| title | Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film |
| title_full | Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film |
| title_fullStr | Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film |
| title_full_unstemmed | Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film |
| title_short | Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film |
| title_sort | comparative study of c v based extraction methods of interface state density for a low temperature polysilicon thin film |
| topic | low-temperature polysilicon interface state density capacitance-voltage |
| url | https://doi.org/10.1088/2053-1591/ac1aa6 |
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