Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film

Comparative study of C–V-based extraction methods of interface state density for a low-temperature polysilicon thin film

To extract comprehensive and accurate interface state density ( D _it ) distribution for a low-temperature polysilicon (LTPS) thin film, three well-established methods based on capacitance–voltage ( C – V ) measurements were compared: high–low frequency capacitance, conductance, and quasi-static (QS...

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Bibliographic Details
Main Authors: Woohui Lee, Joohee Oh, Jae Hwan Chu, Sanggun Choi, Taewook Kang, Hyeyong Chu, Hyoungsub Kim
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
low-temperature polysilicon
interface state density
capacitance-voltage
Online Access:https://doi.org/10.1088/2053-1591/ac1aa6

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