Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL C...

Full description

Bibliographic Details
Main Authors: Khalil Tamersit, Abdellah Kouzou, Hocine Bourouba, Ralph Kennel, Mohamed Abdelrahem
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Nanomaterials
Subjects:
carbon nanotube
junctionless
tunnel field effect transistors
chemical doping
electrostatic doping
NEGF simulation
Online Access:https://www.mdpi.com/2079-4991/12/3/462

Internet

https://www.mdpi.com/2079-4991/12/3/462

Similar Items