Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance
The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL C...
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MDPI AG
2022-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/3/462 |
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| author | Khalil Tamersit Abdellah Kouzou Hocine Bourouba Ralph Kennel Mohamed Abdelrahem |
| author_facet | Khalil Tamersit Abdellah Kouzou Hocine Bourouba Ralph Kennel Mohamed Abdelrahem |
| author_sort | Khalil Tamersit |
| collection | DOAJ |
| description | The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL CNTTFETs) is greatly improved by using the synergy of electrostatic and chemical doping engineering. The computational investigation is conducted via a quantum simulation approach, which solves self-consistently the Poisson equation and the non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. The obtained improvements include the on-current, off-current, ambipolar behavior, leakage current, I<sub>60</sub> metric, subthreshold swing, current ratio, intrinsic delay, and power-delay product. The scaling capability of the proposed design was also assessed, where greatly improved switching performance and sub-thermionic subthreshold swing were recorded by using JL CNTTFET with 5 nm gate length. Moreover, a ferroelectric-based gating approach was employed for more enhancements, where further improvements in terms of switching performance were recorded. The obtained results and the conducted quantum transport analyses indicate that the proposed improvement approach can be followed to improve similar cutting-edge ultrascaled junctionless tunnel field-effect transistors based on emerging atomically thin nanomaterials. |
| first_indexed | 2024-03-09T23:24:34Z |
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| id | doaj.art-83c5fa13a35d46e887a94b280a53eb1e |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T23:24:34Z |
| publishDate | 2022-01-01 |
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| series | Nanomaterials |
| spelling | doaj.art-83c5fa13a35d46e887a94b280a53eb1e2023-11-23T17:21:13ZengMDPI AGNanomaterials2079-49912022-01-0112346210.3390/nano12030462Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching PerformanceKhalil Tamersit0Abdellah Kouzou1Hocine Bourouba2Ralph Kennel3Mohamed Abdelrahem4Department of Electronics and Telecommunications, Université 8 Mai 1945 Guelma, Guelma 24000, AlgeriaApplied Automation and Industrial Diagnosis Laboratory (LAADI), Faculty of Science and Technology, Djelfa University, Djelfa 17000, AlgeriaDepartment of Electronics and Telecommunications, Université 8 Mai 1945 Guelma, Guelma 24000, AlgeriaInstitute for Electrical Drive Systems and Power Electronics (EAL), Technical University of Munich (TUM), 80333 Munich, GermanyInstitute for Electrical Drive Systems and Power Electronics (EAL), Technical University of Munich (TUM), 80333 Munich, GermanyThe low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons. In this article, the performance of nanoscale junctionless carbon nanotube tunneling field-effect transistors (JL CNTTFETs) is greatly improved by using the synergy of electrostatic and chemical doping engineering. The computational investigation is conducted via a quantum simulation approach, which solves self-consistently the Poisson equation and the non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. The obtained improvements include the on-current, off-current, ambipolar behavior, leakage current, I<sub>60</sub> metric, subthreshold swing, current ratio, intrinsic delay, and power-delay product. The scaling capability of the proposed design was also assessed, where greatly improved switching performance and sub-thermionic subthreshold swing were recorded by using JL CNTTFET with 5 nm gate length. Moreover, a ferroelectric-based gating approach was employed for more enhancements, where further improvements in terms of switching performance were recorded. The obtained results and the conducted quantum transport analyses indicate that the proposed improvement approach can be followed to improve similar cutting-edge ultrascaled junctionless tunnel field-effect transistors based on emerging atomically thin nanomaterials.https://www.mdpi.com/2079-4991/12/3/462carbon nanotubejunctionlesstunnel field effect transistorschemical dopingelectrostatic dopingNEGF simulation |
| spellingShingle | Khalil Tamersit Abdellah Kouzou Hocine Bourouba Ralph Kennel Mohamed Abdelrahem Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance Nanomaterials carbon nanotube junctionless tunnel field effect transistors chemical doping electrostatic doping NEGF simulation |
| title | Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance |
| title_full | Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance |
| title_fullStr | Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance |
| title_full_unstemmed | Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance |
| title_short | Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance |
| title_sort | synergy of electrostatic and chemical doping to improve the performance of junctionless carbon nanotube tunneling field effect transistors ultrascaling energy efficiency and high switching performance |
| topic | carbon nanotube junctionless tunnel field effect transistors chemical doping electrostatic doping NEGF simulation |
| url | https://www.mdpi.com/2079-4991/12/3/462 |
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