The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si
The reaction between gallium (Ga) and silicon (Si), termed melt-back etching, greatly deteriorates the quality of GaN grown on a Si substrate. In this paper, the mechanism of melt-back etching was investigated layer-by-layer in a GaN/AlN/Si system. It is found that the environment of the reactor pla...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0105524 |