The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

The reaction between gallium (Ga) and silicon (Si), termed melt-back etching, greatly deteriorates the quality of GaN grown on a Si substrate. In this paper, the mechanism of melt-back etching was investigated layer-by-layer in a GaN/AlN/Si system. It is found that the environment of the reactor pla...

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Bibliographic Details
Main Authors:	Zhenzhuo Zhang, Jing Yang, Degang Zhao, Baibin Wang, Yuheng Zhang, Feng Liang, Ping Chen, Zongshun Liu, Yuhao Ben
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2022-09-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0105524

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