Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

This paper presents an innovative approach to alleviate Z-interference in 3D NAND flash memory by proposing an optimized confined nitride trap layer structure. Z-interference poses a significant challenge in 3D NAND flash memory, especially with the reduction in cell spacing to accommodate an increa...

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Bibliographic Details
Main Authors: Yeeun Kim, Seul Ki Hong, Jong Kyung Park
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Electronics
Subjects:
3D NAND flash memory
confined nitride trap
Z-interference
Online Access:https://www.mdpi.com/2079-9292/13/6/1020

Internet

https://www.mdpi.com/2079-9292/13/6/1020

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