Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN
Scattering of excitons by free carriers is a phenomenon, which is especially important when considering moderately to heavily doped semiconductors in low-temperature experiments, where the interaction of excitons with acoustic and optical phonons is reduced. In this paper, we consider the scattering...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/15/7872 |