Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN
Scattering of excitons by free carriers is a phenomenon, which is especially important when considering moderately to heavily doped semiconductors in low-temperature experiments, where the interaction of excitons with acoustic and optical phonons is reduced. In this paper, we consider the scattering...
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| Format: | Article |
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MDPI AG
2022-08-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/15/7872 |
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| author | Maurício F. C. Martins Quintela Nuno M. R. Peres |
| author_facet | Maurício F. C. Martins Quintela Nuno M. R. Peres |
| author_sort | Maurício F. C. Martins Quintela |
| collection | DOAJ |
| description | Scattering of excitons by free carriers is a phenomenon, which is especially important when considering moderately to heavily doped semiconductors in low-temperature experiments, where the interaction of excitons with acoustic and optical phonons is reduced. In this paper, we consider the scattering of excitons by free carriers in monolayer hexagonal boron nitride encapsulated by a dielectric medium. We describe the excitonic states by variational wave functions, modeling the electrostatic interaction via the Rytova–Keldysh potential. Making the distinction between elastic and inelastic scattering, the relevance of each transition between excitonic states is also considered. Finally, we discuss the contribution of free carrier scattering to the excitonic linewidth, analyzing both its temperature and carrier density dependence. |
| first_indexed | 2024-03-09T12:45:56Z |
| format | Article |
| id | doaj.art-83d390b235334b6b9039f96e3dc4f2be |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T12:45:56Z |
| publishDate | 2022-08-01 |
| publisher | MDPI AG |
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| series | Applied Sciences |
| spelling | doaj.art-83d390b235334b6b9039f96e3dc4f2be2023-11-30T22:11:59ZengMDPI AGApplied Sciences2076-34172022-08-011215787210.3390/app12157872Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBNMaurício F. C. Martins Quintela0Nuno M. R. Peres1Department of Physics, Physics Center of Minho, Campus of Gualtar, Porto Universities (CF–UM–UP), 4710-057 Braga, PortugalDepartment of Physics, Physics Center of Minho, Campus of Gualtar, Porto Universities (CF–UM–UP), 4710-057 Braga, PortugalScattering of excitons by free carriers is a phenomenon, which is especially important when considering moderately to heavily doped semiconductors in low-temperature experiments, where the interaction of excitons with acoustic and optical phonons is reduced. In this paper, we consider the scattering of excitons by free carriers in monolayer hexagonal boron nitride encapsulated by a dielectric medium. We describe the excitonic states by variational wave functions, modeling the electrostatic interaction via the Rytova–Keldysh potential. Making the distinction between elastic and inelastic scattering, the relevance of each transition between excitonic states is also considered. Finally, we discuss the contribution of free carrier scattering to the excitonic linewidth, analyzing both its temperature and carrier density dependence.https://www.mdpi.com/2076-3417/12/15/7872excitonlinewidthfree carriermonolayerscatteringtemperature |
| spellingShingle | Maurício F. C. Martins Quintela Nuno M. R. Peres Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN Applied Sciences exciton linewidth free carrier monolayer scattering temperature |
| title | Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN |
| title_full | Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN |
| title_fullStr | Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN |
| title_full_unstemmed | Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN |
| title_short | Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN |
| title_sort | contribution to excitonic linewidth from free carrier exciton scattering in layered materials the example of hbn |
| topic | exciton linewidth free carrier monolayer scattering temperature |
| url | https://www.mdpi.com/2076-3417/12/15/7872 |
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