Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN

Contribution to Excitonic Linewidth from Free Carrier–Exciton Scattering in Layered Materials: The Example of hBN

Scattering of excitons by free carriers is a phenomenon, which is especially important when considering moderately to heavily doped semiconductors in low-temperature experiments, where the interaction of excitons with acoustic and optical phonons is reduced. In this paper, we consider the scattering...

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Bibliographic Details
Main Authors: Maurício F. C. Martins Quintela, Nuno M. R. Peres
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Applied Sciences
Subjects:
exciton
linewidth
free carrier
monolayer
scattering
temperature
Online Access:https://www.mdpi.com/2076-3417/12/15/7872

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