Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor
The effects of an Al<sub>2</sub>O<sub>3</sub> dielectric patterned by wet etching in a metal-insulator-semiconductor (MIS) tunnel diode are studied by I-V, C-V and charge storage characteristics in this paper. The behaviors are obviously different from the device without an e...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9149569/ |