Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor
The effects of an Al<sub>2</sub>O<sub>3</sub> dielectric patterned by wet etching in a metal-insulator-semiconductor (MIS) tunnel diode are studied by I-V, C-V and charge storage characteristics in this paper. The behaviors are obviously different from the device without an e...
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9149569/ |
| _version_ | 1818331566290501632 |
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| author | Bo-Jyun Chen Jenn-Gwo Hwu |
| author_facet | Bo-Jyun Chen Jenn-Gwo Hwu |
| author_sort | Bo-Jyun Chen |
| collection | DOAJ |
| description | The effects of an Al<sub>2</sub>O<sub>3</sub> dielectric patterned by wet etching in a metal-insulator-semiconductor (MIS) tunnel diode are studied by I-V, C-V and charge storage characteristics in this paper. The behaviors are obviously different from the device without an etched edge. It is suggested that traps are formed at the edge because of the etching process. A circuit model is proposed to explain the effect of the existence of additional traps. With the etched edge as charge storage region, current ratio of programmed and erased states of the tunnel diode sensor is expanded for 165 times and the retention characteristic is much improved. Meanwhile, charge storage characteristic varies with the thickness of the Al<sub>2</sub>O<sub>3</sub> dielectric. Multilevel demonstration is carried out by specified programming process which is not feasible on coupled MIS previously. In addition, relation between the sensing current and stress conditions is examined. A maximum on/off ratio of 10<sup>5</sup> is achieved. The study of the etched edge is believed to be beneficial for future development in memory cell constructed by MIS TD. |
| first_indexed | 2024-12-13T13:21:53Z |
| format | Article |
| id | doaj.art-83e86df4db9b45b298888ebf7505a60b |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-13T13:21:53Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-83e86df4db9b45b298888ebf7505a60b2022-12-21T23:44:24ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01882583310.1109/JEDS.2020.30119969149569Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode SensorBo-Jyun Chen0https://orcid.org/0000-0002-2880-6263Jenn-Gwo Hwu1https://orcid.org/0000-0001-9688-0812Department of Electrical Engineering, National Taiwan University, Taipei, TaiwanDepartment of Electrical Engineering, National Taiwan University, Taipei, TaiwanThe effects of an Al<sub>2</sub>O<sub>3</sub> dielectric patterned by wet etching in a metal-insulator-semiconductor (MIS) tunnel diode are studied by I-V, C-V and charge storage characteristics in this paper. The behaviors are obviously different from the device without an etched edge. It is suggested that traps are formed at the edge because of the etching process. A circuit model is proposed to explain the effect of the existence of additional traps. With the etched edge as charge storage region, current ratio of programmed and erased states of the tunnel diode sensor is expanded for 165 times and the retention characteristic is much improved. Meanwhile, charge storage characteristic varies with the thickness of the Al<sub>2</sub>O<sub>3</sub> dielectric. Multilevel demonstration is carried out by specified programming process which is not feasible on coupled MIS previously. In addition, relation between the sensing current and stress conditions is examined. A maximum on/off ratio of 10<sup>5</sup> is achieved. The study of the etched edge is believed to be beneficial for future development in memory cell constructed by MIS TD.https://ieeexplore.ieee.org/document/9149569/Metal–insulator–semiconductor (MIS)tunnel diodeedge-etched dielectriccurrent window enlargementretention time improvement |
| spellingShingle | Bo-Jyun Chen Jenn-Gwo Hwu Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor IEEE Journal of the Electron Devices Society Metal–insulator–semiconductor (MIS) tunnel diode edge-etched dielectric current window enlargement retention time improvement |
| title | Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor |
| title_full | Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor |
| title_fullStr | Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor |
| title_full_unstemmed | Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor |
| title_short | Edge-Etched Al<sub>2</sub>O<sub>3</sub> Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor |
| title_sort | edge etched al sub 2 sub o sub 3 sub dielectric as charge storage region in a coupled mis tunnel diode sensor |
| topic | Metal–insulator–semiconductor (MIS) tunnel diode edge-etched dielectric current window enlargement retention time improvement |
| url | https://ieeexplore.ieee.org/document/9149569/ |
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