Charge carrier mobility in the configuration restructuring divacancies in silicon
Temperature dependence of the mobility of electrons and holes in p-Si, cultivated by Czochralski method and бестигельной zone melting, after irradiation by fast neutrons reactor was considered. In the framework of the elaborated model of clusters defects the temperature dependence of the concentrati...
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| Format: | Article |
| Language: | English |
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Institute for Nuclear Research, National Academy of Sciences of Ukraine
2014-06-01
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| Series: | Âderna Fìzika ta Energetika |
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| Online Access: | http://jnpae.kinr.kiev.ua/15.2/Articles_PDF/jnpae-2014-15-0148-Dolgolenko.pdf |