Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off
Due to our limited knowledge about silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-09-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/10/10/1456 |