A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor
In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires only one gate electrode with independent power s...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-03-01
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| Series: | Heliyon |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844023010162 |