AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

AlGaN/GaN Distributed Schottky Barrier Single-Pole Single-Throw Millimeter-Wave Switches

This paper presents two designs of millimeter-wave single-pole single-throw switches based on AlGaN/GaN heterostructure. The switches are based on two approaches to the travelling wave concept with Schottky barrier shunt elements integrated into a coplanar waveguide. The first design utilizes a two-...

Full description

Bibliographic Details
Main Authors: Pawel Bajurko, Jakub Sobolewski, Yevhen Yashchyshyn, Pavlo Sai, Sergey L. Rumyantsev, Teodor Narytnyk, Grzegorz Cywinski
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Millimeter-wave
SPST switch
RF switch
AlGaN/GaN
Schottky barrier
distributed shunt
Online Access:https://ieeexplore.ieee.org/document/10311592/

Internet

https://ieeexplore.ieee.org/document/10311592/

Similar Items