Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (...

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Bibliographic Details
Main Authors: Paweł Wyborski, Paweł Podemski, Piotr Andrzej Wroński, Fauzia Jabeen, Sven Höfling, Grzegorz Sęk
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Materials
Subjects:
molecular beam epitaxy
quantum dot
metamorphic buffer layer
band structure
photoluminescence
photoreflectance
Online Access:https://www.mdpi.com/1996-1944/15/3/1071

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https://www.mdpi.com/1996-1944/15/3/1071

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