Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF<sub>4</sub>/O<sub>2</sub> Plasma for Semiconductor Multilevel Interconnects

Change in Electrical/Mechanical Properties of Plasma Polymerized Low Dielectric Constant Films after Etching in CF<sub>4</sub>/O<sub>2</sub> Plasma for Semiconductor Multilevel Interconnects

As semiconductor chips have been integrated to enhance their performance, a low-dielectric-constant material, SiCOH, with a relative dielectric constant <i>k</i> ≤ 3.5 has been widely used as an intermetal dielectric (IMD) material in multilevel interconnects to reduce the resistance-cap...

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Bibliographic Details
Main Authors: Namwuk Baek, Yoonsoo Park, Hyuna Lim, Jihwan Cha, Taesoon Jang, Shinwon Kang, Seonhee Jang, Donggeun Jung
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Materials
Subjects:
low dielectric material
intermetal dielectric
tetrakis(trimethylsilyoxy)silane
reactive ion etching
plasma-enhanced chemical-vapor deposition
Online Access:https://www.mdpi.com/1996-1944/16/13/4663

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https://www.mdpi.com/1996-1944/16/13/4663

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