Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide
Abstract Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements. A nanoscale polycrystalline Hf0.75Zr0.25O2 (HZO) thin films on Pt/Si substrate are fabricated and investigated for suitability for bipolar...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-04-01
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| Series: | Advanced Physics Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/apxr.202300123 |