Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)

A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due...

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Bibliographic Details
Main Authors: Jianan Deng, Jinhai Shao, Bingrui Lu, Yifang Chen, Alexander Zaslavsky, Sorin Cristoloveanu, Maryline Bawedin, Jing Wan
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Interface coupling effect
SOI/GeOI based photodetector
high photoresponsivity
imaging sensor arrays
Online Access:https://ieeexplore.ieee.org/document/8272036/

Internet

https://ieeexplore.ieee.org/document/8272036/

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