Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)
A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8272036/ |
| _version_ | 1818412096183861248 |
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| author | Jianan Deng Jinhai Shao Bingrui Lu Yifang Chen Alexander Zaslavsky Sorin Cristoloveanu Maryline Bawedin Jing Wan |
| author_facet | Jianan Deng Jinhai Shao Bingrui Lu Yifang Chen Alexander Zaslavsky Sorin Cristoloveanu Maryline Bawedin Jing Wan |
| author_sort | Jianan Deng |
| collection | DOAJ |
| description | A CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due to stronger interface coupling, as confirmed by TCAD simulations. A prototype device fabricated with a simplified process flow achieves a record photoresponsivity up to 3.3 x 104 A/W. |
| first_indexed | 2024-12-14T10:41:52Z |
| format | Article |
| id | doaj.art-85100232f7b345758f396799fda9690a |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-14T10:41:52Z |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-85100232f7b345758f396799fda9690a2022-12-21T23:05:39ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01655756410.1109/JEDS.2017.27884038272036Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI)Jianan Deng0https://orcid.org/0000-0001-7450-826XJinhai Shao1Bingrui Lu2https://orcid.org/0000-0001-7686-0734Yifang Chen3Alexander Zaslavsky4Sorin Cristoloveanu5Maryline Bawedin6Jing Wan7State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, ChinaState Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, ChinaState Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, ChinaState Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, ChinaDepartment of Physics and School of Engineering, Brown University, Providence, RI, USAIMEP-LAHC, INP-Grenoble/Minatec, BP257, Grenoble, FranceIMEP-LAHC, INP-Grenoble/Minatec, BP257, Grenoble, FranceState Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, ChinaA CMOS-compatible photodetector with high responsivity is reported. This device utilizes the unique interface coupling effect found in fully depleted silicon on insulator (SOI) MOSFETs. Unlike conventional SOI photodetectors, the proposed device shows higher photoresponsivity in thinner Si films due to stronger interface coupling, as confirmed by TCAD simulations. A prototype device fabricated with a simplified process flow achieves a record photoresponsivity up to 3.3 x 104 A/W.https://ieeexplore.ieee.org/document/8272036/Interface coupling effectSOI/GeOI based photodetectorhigh photoresponsivityimaging sensor arrays |
| spellingShingle | Jianan Deng Jinhai Shao Bingrui Lu Yifang Chen Alexander Zaslavsky Sorin Cristoloveanu Maryline Bawedin Jing Wan Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) IEEE Journal of the Electron Devices Society Interface coupling effect SOI/GeOI based photodetector high photoresponsivity imaging sensor arrays |
| title | Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) |
| title_full | Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) |
| title_fullStr | Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) |
| title_full_unstemmed | Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) |
| title_short | Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) |
| title_sort | interface coupled photodetector icpd with high photoresponsivity based on silicon on insulator substrate soi |
| topic | Interface coupling effect SOI/GeOI based photodetector high photoresponsivity imaging sensor arrays |
| url | https://ieeexplore.ieee.org/document/8272036/ |
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