Characterization of Programmable Charge-Trap Transistors (CTTs) in Standard 28-nm CMOS for Nonvolatile Memory and Analog Arithmetic Applications
In this article, we characterized the charge trapping and detrapping behaviors of charge-trap transistors (CTTs) in standard 28-nm CMOS technology and formulated its programmable threshold voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {TH}}$ </tex-math>...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9490647/ |